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“OXIDE MATERIALS FOR HIGH POWER ELECTRONIC DEVICES“

ABG-140484 Master internship 6 months gratification +50% transport cost
2026-10-11
Université Paris Saclay, Universite de Versailles, CNRS
Versailles Ile-de-France France
  • Materials science
  • Physics
semiconductors; Oxides; Electronic properties;
2026-11-14

Employer organisation

LABORATOIRE: GROUPE D’ETUDES DE LA MATIERE CONDENSEE(GEMAC)
UMR 8635 UNIVERSITE DE VERSAILLES ST QUENTIN EN Y. - CNRS


ADRESSE: 45 AVENUE DES ETATS-UNIS, 78035 VERSAILLES CEDEX

Description

 

Context: the energy transition and the reduction of co₂ emissions require the development of power electronic devices that are ever more high-performance, efficient, and compact. wide-gap semiconductors, such as sic and gan, are currently being extensively researched for medium-power applications, particularly in hybrid and electric vehicles. for higher-power applications, such as smart grids or rail transportation, very wide-gap materials, such as ga₂o₃ and nioₓ-based heterostructures, show great potential. this internship is part of the goten – pepr électronique project, https://www.pepr-electronique.fr/goten/

tasks: the internship will focus on studying the influence of thin-film growth conditions on their structural, electrical, and optical properties.

the main activities will include:
• preparation of electrical contacts;
• electrical transport measurements (i-v, c-v, hall effect);
• optical measurements of transmittance and reflectance;
• structural characterization by x-ray diffraction (xrd);
• analysis and interpretation of experimental results;
• writing scientific reports;
• presenting results at scientific meetings;
• regular interactions with the project’s french and international partners.

looking for profile of student

student from an engineering school or university, with a background in:
• semiconductor physics; materials physics; electronics;

Desired skills
• interest in experimentation and scientific instrumentation;
• knowledge of materials physics and/or semiconductor physics
;
• Fluent in English;
• ability to analyze and process data;
• independence, and motivation;
• ability to work in a team and meet deadlines.

what the internship offers: this internship will provide practical experience in the characterization of semiconductor materials, instrumentation, and data analysis, as part of a collaborative research project with national and international partners.

Possibility to prolong for theses :

Will be determined on the base of performance

gratification and  reimbursement of transportation(work-home) 50%  of cost

 

Profile

REQUIRED SKILLS: Very Strong background in solid state physics/semiconductors science(!);

English and French languages;

Motivation to learn power electronics device principals and applications.

Willing to learn experimental measurements and scientific instrumentation;

Good skill of communication.

Starting date

2027-02-01
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