“OXIDE MATERIALS FOR HIGH POWER ELECTRONIC DEVICES“
| ABG-140484 | Stage master 2 / Ingénieur | 6 mois | gratification +50% transport cost |
| 11/10/2026 |
- Matériaux
- Physique
Établissement recruteur
LABORATOIRE: GROUPE D’ETUDES DE LA MATIERE CONDENSEE(GEMAC)
UMR 8635 UNIVERSITE DE VERSAILLES ST QUENTIN EN Y. - CNRS
ADRESSE: 45 AVENUE DES ETATS-UNIS, 78035 VERSAILLES CEDEX
Description
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Context: the energy transition and the reduction of co₂ emissions require the development of power electronic devices that are ever more high-performance, efficient, and compact. wide-gap semiconductors, such as sic and gan, are currently being extensively researched for medium-power applications, particularly in hybrid and electric vehicles. for higher-power applications, such as smart grids or rail transportation, very wide-gap materials, such as ga₂o₃ and nioₓ-based heterostructures, show great potential. this internship is part of the goten – pepr électronique project, https://www.pepr-electronique.fr/goten/ tasks: the internship will focus on studying the influence of thin-film growth conditions on their structural, electrical, and optical properties. the main activities will include: looking for profile of student student from an engineering school or university, with a background in: Desired skills what the internship offers: this internship will provide practical experience in the characterization of semiconductor materials, instrumentation, and data analysis, as part of a collaborative research project with national and international partners. |
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Possibility to prolong for theses : |
Will be determined on the base of performance |
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gratification and reimbursement of transportation(work-home) 50% of cost |
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Profil
REQUIRED SKILLS: Very Strong background in solid state physics/semiconductors science(!);
English and French languages;
Motivation to learn power electronics device principals and applications.
Willing to learn experimental measurements and scientific instrumentation;
Good skill of communication.
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